A semiconductor memory such as a dynamic RAM having memory mats each divided into a plurality of units or sub-memory mats. Each sub-memory mat comprises: a memory array having sub-word lines and sub-bit lines intersecting orthogonally and dynamic memory cells located in lattice fashion at the intersection points between the intersecting sub-word and sub-bit lines; a sub-word line driver including unit sub-word line driving circuits corresponding to the sub-word lines; a sense amplifier including...

A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat tr...

A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.

In a large scale integrated circuit wherein insulated gate field-effect transistors are arrayed in the shape of a matrix on a single semiconductor substrate, an improvement is provided comprising the fact that some of the transistors are of the depletion type, while others of the transistors are of the enhancement type, so that a very large number of contact holes which are otherwise required for electrical connection between aluminum wiring and the drain regions are unnecessary. This permits th...

A semiconductor device which comprises an insulating flexible substrate having conductors extending on one side of the foil from the edge to near the center. A semiconductor element is connected with its contacts connected to the ends of the conductors at the center of the foil. On the side of the foil remote from the conductors a reinforcement member is provided which is present at least near the edges of the foil, the reinforcement member being connected in an adhering manner to the foil and h...

A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from...

A semiconductor device is provided having a plurality of photodiodes formed in series by polycrystalline semiconductor material.

A semiconductor thyristor, having a given forward voltage drop, has its turn-off time or the reverse current behavior adjusted in a defined manner and a reduced blocking current. Essentially, the semiconductor element is divided, at its anode end, into zone elements having a high and a low concentration of recombination centers, whereby, at the anode end, zones not oppositely disposed from the emitter receive a lower average concentratin of recombination centers. The invention is most advantageo...

The invention relates to a semiconductor device in which a crossing connection is realized by using parts of a layer of refractory conductive material already present for masking as a part of a current conductor separated from a crossing conductor by an insulation layer. The mask of refractory material may also define the regions in which switching transistors are realized. The invention results in important advantages, in connection with density and crossing connections, in particular in I.sup....

A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.