A transparent conductive layer of SnO.sub.2 is deposited on a substrate by an RF-plasma assisted chemical vapor reaction of CO.sub.2 with an organic tin compound, such as tetramethyl tin, for example. A CCD optical imager is fabricated, using the method of the invention to form a transparent conductive layer thereon.

A quartz tube designed for use at temperature in excess of 1,200.degree. C. is provided with a plurality of external reinforcing ribs integral with the tubular body member.

The summing comparator includes: a first integrator; a second integrator for receiving an output of the first integrator; and a comparator for switching when the output of the first integrator is greater than the output of the second integrator. The outputs of the first and second integrators are directly compared by the comparator without the necessity of a summing amplifier.

A lead frame is plated with palladium and then selected portions of the lead frame leads are spot plated with silver to improve solderability.

A method of removal of photoresist in a manufacturing process for semiconductor devices utilizes burnoff in an oxidizing atmosphere. In order to reduce contamination of underlying silicon dioxide layers, chlorine in the atmosphere getters Na+ ions, etc. The chlorine gas is obtained from HCL added to the oxidizing atmosphere.

Hydrogen annealing permits deposition of good quality polysilicon atop TiO.sub.2. Hydrogen annealing of TiO.sub.2 prevents the tremendous hydrogen affinity of as-deposited TiO.sub.2 from disrupting process reactions during deposition of polysilicon.

A system for measuring the flexure of a saw blade in situ includes in one embodiment a non-contact displacement sensor and means for directing a fluid flow at the blade adjacent the sensor. The deflection of the blade by the fluid flow is detected by the sensor which generates a signal related to blade flexure. The system indicates when a saw blade is correctly tensioned or when retensioning is required.

A method for optically marking selected integrated circuit bars of visual identification. In one embodiment a layer for photosensitive material applied to a portion of all of the bars on a wafer prior to testing. Selected bars are marked by directing a beam of radiant energy at the photosensitive material, which changes opacity and/or color in the irradiated region.

Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i.e., without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then cove…

Method of preparing silicon nitride film by glow discharge from the decomposition of liquid trisilylamine, (SiH.sub.3).sub.3 N, which is a volatile monomer. In this connection, the use of a single monomer as diluted with an inert gas enables greater uniformity to be achieved in the deposition of silicon nitride films. Further, the presence of Si-N bonds in the monomer enables more control and better stoichiometry in the deposited films.